PTAC240502FCV1R0XTMA1

Trans RF MOSFET N-CH 65V 5Pin Case H-37248 T/R

Summary of Features:

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Input matched

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Asymmetric Doherty design

\- Main: 17 W Typ P1dB

\- Peak: 33 W Typ P1dB

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Typical Pulsed CW performance, 2350 MHz, 28 V, 160 μs pulse width, 10% duty cycle, Doherty Configuration

\- Output power at P1dB = 45.7 W

\- Efficiency = 46.2%

\- Gain = 14.6 dB

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Typical single-carrier WCDMA performance, 2350 MHz, 28 V, 8.4 dB PAR @ 0.01% CCDF probability

\- Output power = 8.91 W

\- Efficiency = 44.2%

\- Gain = 14.2 dB

\- ACPR = –31 dBc @ 5 MHz

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Capable of handling 10:1 VSWR @28 V, 50 W CW output power

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Integrated ESD protection: HBM Class 1B per JESD22-A114

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Low thermal resistance

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Pb-free and RoHS compliant