16Mbit 1Mb x16, Boot Block 3V Supply Flash Memory
SUMMARY DESCRIPTION
The M28W160EC is a 16 Mbit 1 Mbit x 16 nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage 2.7 to 3.6V supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– VDD = 2.7V to 3.6V Core Power Supply
– VDDQ= 1.65V to 3.6V for Input/Output
– VPP = 12V for fast Program optional
■ ACCESS TIME: 70, 85, 90,100ns
■ PROGRAMMING TIME:
– 10µs typical
– Double Word Programming Option
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ MEMORY BLOCKS
– Parameter Blocks Top or Bottom location
– Main Blocks
■ BLOCK LOCKING
– All blocks locked at Power Up
– Any combination of blocks can be locked
– WP for Block Lock-Down
■ SECURITY
– 64 bit user Programmable OTP cells
– 64 bit unique device identifier
– One Parameter Block Permanently Lockable
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M28W160ECT: 88CEh
– Bottom Device Code, M28W160ECB: 88CFh
■ ECOPACK PACKAGES AVAILABLE
型号 | 品牌 | 下载 |
---|---|---|
M28W160ECB85ZB6F | Numonyx | 下载 |
M28W160ECB70ZB6U TR | Micron 镁光 | 下载 |
M28W160CT70N6F TR | Micron 镁光 | 下载 |
M28W160ECB70ZB6E | Micron 镁光 | 下载 |
M28W160ECT70ZB6E | Micron 镁光 | 下载 |
M28W160CT70N6F | Micron 镁光 | 下载 |
M28W160ECT70ZB6U | Micron 镁光 | 下载 |
M28W160CB70N6F | Micron 镁光 | 下载 |
M28W320FCT70ZB6E | Micron 镁光 | 下载 |
M28W320FCB70ZB6F | Micron 镁光 | 下载 |
M28W320HSB70ZA6F | Micron 镁光 | 下载 |