60A,650V场截止沟槽栅IGBT,以及超快二极管
The IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 420000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGW60H65DRF | ST Microelectronics 意法半导体 | 下载 |
| STGW20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGW35HF60W | ST Microelectronics 意法半导体 | 下载 |
| STGWT30H65FB | ST Microelectronics 意法半导体 | 下载 |
| STGWT30H60DFB | ST Microelectronics 意法半导体 | 下载 |
| STGW19NC60W | ST Microelectronics 意法半导体 | 下载 |
| STGWT40H60DLFB | ST Microelectronics 意法半导体 | 下载 |
| STGWT40H65DFB | ST Microelectronics 意法半导体 | 下载 |
| STGW30H60DFB | ST Microelectronics 意法半导体 | 下载 |
| STGWT20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGWT30V60F | ST Microelectronics 意法半导体 | 下载 |