MMBFJ108

FAIRCHILD SEMICONDUCTOR  MMBFJ108.  射频 JFET

最大源漏极电压VdsDrain-Source Voltage| 25v \---|--- 栅源极击穿电压VBRGSGate-Source Voltage| -25v 漏极电流Vgs=0VIDSSDrain Current| 80ma 关断电压VgsoffGate-Source Cut-off Voltage| -3~-10v 耗散功率PdPower Dissipation| 350mW/0.35W Description & Applications| N-Channel Switch • This device is designed for digital switching applications where very low on resistance is mandatory. 描述与应用| N沟道开关 •本设备是专为数字开关 非常低导通电阻的应用 强制性的。

艾睿:
Trans JFET N-CH 3-Pin SuperSOT T/R

富昌:
MMBFJ108 Series 25 V 80 mA Surface Mount N-Channel Switch - SuperSot-3

Chip1Stop:
Trans JFET N-CH 3-Pin SuperSOT T/R

Verical:
Trans JFET N-CH 3-Pin SuperSOT T/R

Newark:
# FAIRCHILD SEMICONDUCTOR  MMBFJ108  JFET Transistor, Junction Field Effect, -25 V, 80 mA, 80 mA, -10 V, SOT-23, JFET

Win Source:
JFET N-CH 25V 350MW SSOT3