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FDS6898A概述

FAIRCHILD SEMICONDUCTOR FDS6898A. 双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V

The is a dual N-channel logic level PWM optimized MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.