SN74CB3Q3125

四路 FET、2.5V/3.3V、低压高带宽总线开关

The device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance ron. The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output I/O ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

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High-Bandwidth Data Path up to 500 MHz1

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5-V Tolerant I/Os With Device Powered Up

or Powered Down

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Low and Flat ON-State Resistance ron

Characteristics Over Operating Range

ron = 3 Ω Typ

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Rail-to-Rail Switching on Data I/O Ports

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0-V to 5-V Switching With 3.3-V VCC

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0-V to 3.3-V Switching With 2.5-V VCC

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Bidirectional Data Flow With Near-Zero

Propagation Delay

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Low Input and Output Capacitance Minimizes

Loading and Signal Distortion

CioOFF = 4 pF Typ

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Fast Switching Frequency fOE = 20 MHz Max

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Data and Control Inputs Provide Undershoot

Clamp Diodes

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Low Power Consumption

ICC = 0.3 mA Typ

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VCC Operating Range From 2.3 V to 3.6 V

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Data I/Os Support 0-V to 5-V Signaling Levels

0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V

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Control Inputs Can Be Driven by TTL,

5-V, or 3.3-V CMOS Outputs

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Ioff Supports Partial-Power-Down Mode Operation

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Latch-Up Performance Exceeds 100 mA Per

JESD 78, Class II

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ESD Performance Tested Per JESD 22

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2000-V Human-Body Model

A114-B, Class II

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1000-V Charged-Device Model C101

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Supports Both Digital and Analog Applications:

USB Interface, Differential Signal Interface, Bus

Isolation, Low-Distortion Signal Gating