MID200-12A4

IXYS SEMICONDUCTOR  MID200-12A4  单晶体管, IGBT, 270 A, 2.2 V, 1.13 kW, 1.2 kV, Module, 7 引脚

IGBT 模块，IXYS

### IGBT 分立元件和模块，IXYS

绝缘栅级双极性或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

得捷:
IGBT MOD 1200V 270A 1130W Y3DCB

欧时:
1200V 270A IGBT Boost Chopper Pack NPT

e络盟:
单晶体管, IGBT, 270 A, 2.2 V, 1.13 kW, 1.2 kV, Module, 7 引脚

艾睿:
Even with large currents this MID200-12A4 infineon IGBT module from Ixys Corporation will work in your circuit. Its maximum power dissipation is 1130000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT driver board has an operating temperature range of -40 °C to 150 °C. It is made in a single configuration.

Verical:
Trans IGBT Module N-CH 1.2KV 270A 5-Pin Y3-DCB