BR93H76RFVT-2CE2

BR93H76RFVT-2CE2概述

ROHM  BR93H76RFVT-2CE2  EEPROM, AEC-Q100, 8 Kbit, 512 x 16位, 1.25 MHz, 3线, TSSOP, 8 引脚 新

The is an 8Kbit serial EEPROM of serial 3-line interface method in 8 pin TSSOP package. This EEPROM conforming to Microwire bus and withstands electrostatic voltage up to 6KV HBM method typ. It has an address auto increment function at READ operation, prevention of write mistake such as write prohibition at power on, write prohibition by command code and write mistake prevention circuit at low voltage. Device is high reliable using original double cell structure, more than 50 years data retention Ta

.
Single supply voltage operate from 2.5V to 5.5V
.
Operating temperature range from -40°C to +125°C
.
Automotive grade AEC-Q100 qualified
.
Self timed programming cycle
.
Program condition display by READY/BUSY complementary
.
Data set to FFFFh on all addresses at shipment
.
Low supply current for write operation is 0.8mA typ at 5V
.
Low supply current for read operation is 0.5mA typ at 5V
.
Low supply current for standby operation is 0.1µA typ at 5V
.
Bit format of 512 x 16bit

This product is electrostatic sensitive product and it may be damaged due to electrostatic discharge. Please take proper caution.

The residue of flux may negatively affect product performance and reliability when highly active halogenous chlorine, bromine etc flux is used.

BR93H76RFVT-2CE2数据文档
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