IXTP18P10T

IXTP18P10T概述

TO-220AB P-CH 100V 18A

P-Channel 100V 18A Tc 83W Tc Through Hole TO-220AB


得捷:
MOSFET P-CH 100V 18A TO220AB


艾睿:
Make an effective common gate amplifier using this IXTP18P10T power MOSFET from Ixys Corporation. Its maximum power dissipation is 83000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.


Chip1Stop:
Trans MOSFET P-CH 100V 18A 3-Pin3+Tab TO-220AB


Verical:
Trans MOSFET P-CH 100V 18A 3-Pin3+Tab TO-220AB


Win Source:
MOSFET P-CH 100V 18A TO-220


IXTP18P10T数据文档
型号 品牌 下载
IXTP18P10T

IXYS Semiconductor

下载
IXTP160N075T

IXYS Semiconductor

下载
IXTP44P15T

IXYS Semiconductor

下载
IXTP102N15T

IXYS Semiconductor

下载
IXTP90N055T

IXYS Semiconductor

下载
IXTP220N055T

IXYS Semiconductor

下载
IXTP152N085T

IXYS Semiconductor

下载
IXTP200N085T

IXYS Semiconductor

下载
IXTP76N075T

IXYS Semiconductor

下载
IXTP98N075T

IXYS Semiconductor

下载
IXTP70N085T

IXYS Semiconductor

下载

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