IXGT6N170

Trans IGBT Chip N-CH 1700V 6A 75000mW 3Pin2+Tab TO-268

This IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 75000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

得捷:
IGBT 1700V 12A 75W TO268

艾睿:
This IXGT6N170 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 75000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

Verical:
Trans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin2+Tab TO-268