BBS3002-DL-1E

BBS3002-DL-1E概述

场效应管, MOSFET, P沟道, -60V, -100A, TO-263-3

P-Channel 60V 100A Ta 90W Tc Surface Mount D²PAK TO-263


得捷:
MOSFET P-CH 60V 100A D2PAK


立创商城:
BBS3002-DL-1E


艾睿:
Compared to traditional transistors, BBS3002-DL-1E power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 90000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.


安富利:
Trans MOSFET P-CH 60V 100A 3-Pin2+Tab TO-263 T/R


富昌:
BBS3002 Series 60 V 100 A 5.8 mOhm SMT P-Channel Power Mosfet - D2PAK-3


Verical:
Trans MOSFET P-CH 60V 100A Automotive 3-Pin2+Tab D2PAK T/R


罗切斯特:
Trans MOSFET P-CH 60V 100A 3-Pin2+Tab TO-263 T/R


Win Source:
MOSFET P-CH 60V 100A D2PAK


BBS3002-DL-1E数据文档
型号 品牌 下载
BBS3002-DL-1E

ON Semiconductor 安森美

下载
BBS3002-TL-1E

ON Semiconductor 安森美

下载
BBS3002-DL-E

ON Semiconductor 安森美

下载

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