IXFR36N60P

IXYS SEMICONDUCTOR  IXFR36N60P  功率场效应管, MOSFET, N沟道, 20 A, 600 V, 200 mohm, 10 V, 5 V

通孔 N 通道 20A（Tc） 208W（Tc） ISOPLUS247™

得捷:
MOSFET N-CH 600V 20A ISOPLUS247

贸泽:
MOSFET 600V 20A

e络盟:
晶体管, MOSFET, N沟道, 20 A, 600 V, 0.2 ohm, 10 V, 5 V

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IXFR36N60P power MOSFET from Ixys Corporation provides the solution. Its maximum power dissipation is 208000 mW. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans MOSFET N-CH 600V 20A 3-Pin3+Tab ISOPLUS 247

Verical:
Trans MOSFET N-CH Si 600V 20A 3-Pin3+Tab ISOPLUS 247

Newark:
# IXYS SEMICONDUCTOR  IXFR36N60P  Power MOSFET, N Channel, 20 A, 600 V, 200 mohm, 10 V, 5 V

Win Source:
MOSFET N-CH 600V 20A ISOPLUS247