FS3L25R12W2H3_B11

IGBT模块

Summary of Features:

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High Speed IGBT H3

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Low Switching Losses

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Fast Si clamping diodes 25A 650V

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Al 2 O 3 Substrate with Low Thermal Resistance

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PressFIT Contact Technology

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Rugged mounting due to integrated mounting clamps

Benefits:

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Compact design

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Optimized customer’s development cycle time and cost