IXTK140N20P

IXYS SEMICONDUCTOR  IXTK140N20P  晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 15 V, 5 V

通孔 N 通道 200 V 140A（Tc） 800W（Tc） TO-264（IXTK）

得捷:
MOSFET N-CH 200V 140A TO264

贸泽:
MOSFET 140 Amps 200V 0.018 Rds

艾睿:
Compared to traditional transistors, IXTK140N20P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 800000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with polarht technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

TME:
Transistor: N-MOSFET; unipolar; 200V; 140A; 800W; TO264

Newark:
MOSFET Transistor, PolarFET, N Channel, 140 A, 200 V, 18 mohm, 15 V, 5 V