BC847BT-7-F

BC847BT-7-F概述

BC847BT-7-F 编带

Design various electronic circuits with this versatile NPN GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

BC847BT-7-F数据文档
型号 品牌 下载
BC847BT-7-F

Diodes 美台

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BC847CLT1G

ON Semiconductor 安森美

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BC846ALT1G

ON Semiconductor 安森美

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BC846BW

NXP 恩智浦

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BC846BDW1T1G

ON Semiconductor 安森美

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BC846BLT3G

ON Semiconductor 安森美

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BC846BMTF

Fairchild 飞兆/仙童

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BC846S,125

NXP 恩智浦

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BC846BLT1G

ON Semiconductor 安森美

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BC847BS

NXP 恩智浦

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BC846BWT1G

ON Semiconductor 安森美

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