先进的IGBT / MOSFET驱动器 Advanced IGBT/MOSFET Driver
高端 栅极驱动器 IC 非反相 8-DIP
得捷:
IC DRIVER GATE IGBT/MOSFET 8DIP
艾睿:
Change state in a high power transistor by implementing this TD351IN power driver by STMicroelectronics. This device has a maximum propagation delay time of 2200 ns and a maximum power dissipation of 500 mW. Its maximum power dissipation is 500 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C. This device has a minimum operating supply voltage of 12 V and a maximum of 26 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| TD351IN | ST Microelectronics 意法半导体 | 下载 |
| TD352IDT | ST Microelectronics 意法半导体 | 下载 |
| TD350E | ST Microelectronics 意法半导体 | 下载 |
| TD351ID | ST Microelectronics 意法半导体 | 下载 |
| TD352ID | ST Microelectronics 意法半导体 | 下载 |
| TD350ETR | ST Microelectronics 意法半导体 | 下载 |
| TD352IN | ST Microelectronics 意法半导体 | 下载 |
| TD350ID | ST Microelectronics 意法半导体 | 下载 |
| TD351 | ST Microelectronics 意法半导体 | 下载 |
| TD352 | ST Microelectronics 意法半导体 | 下载 |