NPN双极型晶体管 NPN BIPOLAR TRANSISTOR
Implement this versatile NPN GP BJT from into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 6 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| 2N3501 | Microsemi 美高森美 | 下载 |
| 2N3500 | Microsemi 美高森美 | 下载 |
| 2N3507 | Microsemi 美高森美 | 下载 |
| 2N3501L | Microsemi 美高森美 | 下载 |
| 2N3507A | Microsemi 美高森美 | 下载 |
| 2N3506 | Microsemi 美高森美 | 下载 |
| 2N3501UB | Microsemi 美高森美 | 下载 |
| 2N3584 | Microsemi 美高森美 | 下载 |
| 2N3585 | Microsemi 美高森美 | 下载 |
| 2N3583 | Central Semiconductor | 下载 |
| 2N3505 | Central Semiconductor | 下载 |