BSC027N04LSGATMA1

INFINEON  BSC027N04LSGATMA1  晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0023 ohm, 10 V, 2 V 新

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 40V 24A/100A TDSON

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC027N04LSGATMA1, 100 A, Vds=40 V, 8引脚 TDSON封装

贸泽:
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3

e络盟:
功率场效应管, MOSFET, N沟道, 40 V, 100 A, 0.0023 ohm, PG-TDSON, 表面安装

艾睿:
Compared to traditional transistors, BSC027N04LSGATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 40V 24A 8-Pin TDSON T/R

Chip1Stop:
Trans MOSFET N-CH 40V 24A 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 40V 24A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC027N04LSGATMA1  MOSFET, N-CH, 40V, 100A, PG-TDSON-8 New

Win Source:
MOSFET N-CH 40V 100A TDSON-8