MHT1004NR3

RF Power Transistor,2450 to 2450MHz, 280W, Typ Gain in dB is 15.2 @ 2450MHz, 32V, LDMOS, SOT1823

Overview

The MHT1004N and MHT1004GN 300 W CW high efficiency RF power transistors are designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.

For additional information contact ® Semiconductor.

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## Features

* Characterized with series equivalent large-signal impedance parameters and common source S-parameters

* Internally matched for ease of use

* Qualified for operation at 32 Vdc

* Integrated ESD protection

* 150°C case operating temperature

* 225°C die temperature capability

* RoHS Compliant

**Typical Applications**

* Consumer cooking

* Commercial cooking

## Features RF Performance Tables

### Typical Performance

VDD = 32 Vdc, IDQ = 100 mA

.

*Frequency

MHz

.

* | **Signal Type** | **Gps

dB

.

* | **PAE

%

.

* | **Pout

W

.

*

\---|---|---|---|---

2450| CW| 15.2| 57.9| 300

### Load Mismatch/Ruggedness

**Frequency

MHz

.

* | **Signal Type** | **VSWR** | **Pin

W

.

* | **Test

Voltage

.

* | **Result**

\---|---|---|---|---|---

2450| CW| > 5:1

at all Phase Angles| 15.0

2 dB Overdrive| 32| No Device Degradation