CXT3019

CXT3019 NPN三极管 140V 1A 100MHz 100~300 500mV/0.5V SOT-89 marking/标记 CXT3019 高电压放大器

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 140V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 80V 集电极连续输出电流ICCollector CurrentIC| 1A 截止频率fTTranstion FrequencyfT| 100MHz 直流电流增益hFEDC Current GainhFE| 100~300 管压降VCE（sat）Collector-Emitter Saturation Voltage| 500mV/0.5V 耗散功率PcPower Dissipation| 1.2W Description & Applications| SURFACE MOUNT NPN SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. 描述与应用| 表面贴装 NPN硅 中央半导体CXT5551型硅NPN晶体管由外延平面工艺，环氧树脂模压在一个表面贴装封装，高电压放大器应用设计制造。