IGP06N60T

IGP06N60T概述

低损耗DuoPack : IGBT在TRENCHSTOP和场终止技术 Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

Summary of Features:

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Lowest V cesat drop for lower conduction losses
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Low switching losses
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Easy parallel switching capability due to positive temperature coefficient in V cesat
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Very soft, fast recovery anti-parallel Emitter Controlled Diode
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High ruggedness, temperature stable behavior
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Low EMI emissions
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Low gate charge
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Very tight parameter distribution

Benefits:

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Highest efficiency – low conduction and switching losses
.
Comprehensive portfolio in 600V and 1200V for flexibility of design
.
High device reliability
IGP06N60T数据文档
型号 品牌 下载
IGP06N60T

Infineon 英飞凌

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IGP06N60TXKSA1

Infineon 英飞凌

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IGP03N120H2

Infineon 英飞凌

下载
IGP01N120H2

Infineon 英飞凌

下载
IGP03N120H2XKSA1

Infineon 英飞凌

下载
IGP01N120H2XKSA1

Infineon 英飞凌

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