BLF645

宽带功率LDMOS晶体管 Broadband power LDMOS transistor

General description

A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Features

■ CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:

   ♦ Average output power = 100 W

   ♦ Power gain = 18 dB

   ♦ Drain efficiency = 56 %

■ 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:

   ♦ Peak envelope load power = 100 W

   ♦ Power gain = 18 dB

   ♦ Drain efficiency = 45 %

   ♦ Intermodulation distortion = −32 dBc

■ Integrated ESD protection

■ Excellent ruggedness

■ High power gain

■ High efficiency

■ Excellent reliability

■ Easy power control

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous SubstancesRoHS

Applications

■ Communication transmitter applications in the HF to 1400 MHz frequency range

■ Industrial applications in the HF to 1400 MHz frequency range