RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
By using a combination of metal-oxide-semiconductor technology, this RF amplifier from STMicroelectronics can be implemented in an electronic circuit as a switching device. Its maximum power dissipation is 31700 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD57018S-E | ST Microelectronics 意法半导体 | 下载 |
| PD57002-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006S-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006-E | ST Microelectronics 意法半导体 | 下载 |
| PD57030-E | ST Microelectronics 意法半导体 | 下载 |
| PD57060-E | ST Microelectronics 意法半导体 | 下载 |
| PD57070-E | ST Microelectronics 意法半导体 | 下载 |
| PD57060S-E | ST Microelectronics 意法半导体 | 下载 |
| PD57045TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57018STR-E | ST Microelectronics 意法半导体 | 下载 |