IPB065N15N3GATMA1

INFINEON  IPB065N15N3GATMA1  晶体管, MOSFET, N沟道, 130 A, 150 V, 0.0052 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，100V 及以上

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB065N15N3GATMA1, 130 A, Vds=150 V, 7引脚 D2PAK TO-263封装

得捷:
MOSFET N-CH 150V 130A TO263-7

立创商城:
N沟道 150V 130A

贸泽:
MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3

e络盟:
晶体管, MOSFET, N沟道, 130 A, 150 V, 0.0052 ohm, 10 V, 3 V

艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB065N15N3GATMA1 power MOSFET. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

富昌:
Single N-Channel 150 V 6.5 mOhm 70 nC OptiMOS™ Power Mosfet - D2PAK-7

Chip1Stop:
Trans MOSFET N-CH 150V 130A 7-Pin6+Tab TO-263

TME:
Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3

Verical:
Trans MOSFET N-CH 150V 130A Automotive 7-Pin6+Tab D2PAK T/R

Newark:
# INFINEON  IPB065N15N3GATMA1  MOSFET Transistor, N Channel, 130 A, 150 V, 0.0052 ohm, 10 V, 3 V