FQP12P20

FQP12P20概述

FAIRCHILD SEMICONDUCTOR  FQP12P20.  晶体管, MOSFET, P沟道, 11.5 A, -200 V, 360 mohm, -10 V, -5 V

The is a QFET® P-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.

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100% Avalanche tested
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31nC Typical gate charge
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30pF Typical low Crss
FQP12P20数据文档
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FQP12P20

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