N沟道600V - 7A - TO- 220超高速的PowerMESH IGBT N-channel 600V - 7A - TO-220 Ultra fast PowerMESH IGBT
Don"t be afraid to step up the amps in your device when using this IGBT transistor from STMicroelectronics. Its maximum power dissipation is 32000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGF19NC60WD | ST Microelectronics 意法半导体 | 下载 |
| STGF7NB60SL | ST Microelectronics 意法半导体 | 下载 |
| STGFW30V60DF | ST Microelectronics 意法半导体 | 下载 |
| STGF35HF60W | ST Microelectronics 意法半导体 | 下载 |
| STGFW20V60DF | ST Microelectronics 意法半导体 | 下载 |
| STGF20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGF20NB60S | ST Microelectronics 意法半导体 | 下载 |
| STGF30H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGFW30V60F | ST Microelectronics 意法半导体 | 下载 |
| STGF19NC60HD | ST Microelectronics 意法半导体 | 下载 |
| STGFW20H65FB | ST Microelectronics 意法半导体 | 下载 |