M58BW016FB7T3F

NOR Flash Parallel/Serial 3V/3.3V 16Mbit 512K x 32Bit 70ns 80Pin PQFP T/R

Description

The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the input and output buffers. Optionally a 12 V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.

Features

Supply voltage

  –VDD= 2.7 V to 3.6 V for program, erase and read

  –VDDQ= VDDQIN= 2.4 V to 3.6 V for I/O buffers

  –VPP= 12 V for fast program optional

High performance

  – Access times: 70, 80 ns

  – 56 MHz effective zero wait-state burst read

  – Synchronous burst read

  – Asynchronous page read

Hardware block protection

  –WPpin for write protect of the 2 outermost parameter blocks and all main blocks

  –RPpin for write protect of all blocks

Optimized for FDI drivers

  – Fast program / erase suspend latency time < 6 µs

  – Common Flash interface

Memory blocks

  – 8 parameters blocks top or bottom

  – 31 main blocks

Low power consumption

  – 5 µA typical deep power-down

  – 60 µA typical standby for M58BW016DT/B

   150 µA typical standby for M58BW016FT/B

  – Automatic standby after asynchronous read

Electronic signature

  – Manufacturer code: 20h

  – Top device code: 8836h

  – Bottom device code: 8835h

100 K write/erase cycling + 20 years data retention minimum

High reliability level with over 1 M write/erase cycling sustained