氮化镓HEMT脉冲功率晶体管2.7 - 3.1 GHz的， 100W的峰值， 500US脉冲，占空比为10％ GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
RF Mosfet HEMT 50V 500mA 2.7GHz ~ 3.1GHz 12dB 100W
得捷:
TRANSISTOR GAN 100W 2.7-3.1GHZ
Chip1Stop:
Trans JFET 7.1A GaN HEMT 3-Pin
Verical:
Trans JFET 7.1A GaN HEMT 3-Pin
| 型号 | 品牌 | 下载 |
|---|---|---|
| MAGX-002731-100L00 | M/A-Com | 下载 |
| MAGX-001220-100L00 | M/A-Com | 下载 |
| MAGX-000035-05000P | M/A-Com | 下载 |
| MAGX-001090-600L00 | M/A-Com | 下载 |
| MAGX-001214-500L00 | M/A-Com | 下载 |
| MAGX-000912-500L00 | M/A-Com | 下载 |
| MAGX-001214-650L00 | M/A-Com | 下载 |
| MAGX-011086 | M/A-Com | 下载 |
| MAGX-L20035-015000 | M/A-Com | 下载 |
| MAGX-000035-PB2PPR | M/A-Com | 下载 |
| MAGX-L21214-650L00 | M/A-Com | 下载 |