Rectifiers 200V 10A 25ns Dual 55A IFSM
FEATURES
• Glass passivated chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package
• Solder dip 260 °C, 40 s for TO-220AB and ITO-220AB package
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
得捷:
DIODE ARRAY GP 200V 5A TO263AB
安富利:
Diode Switching 200V 10A 3-Pin2+Tab TO-263AB Tube
| 型号 | 品牌 | 下载 |
|---|---|---|
| UGB10DCT-E3/45 | Vishay Semiconductor 威世 | 下载 |
| UGB10BCT-E3/45 | Vishay Semiconductor 威世 | 下载 |
| UGB10BCT-E3/81 | Vishay Semiconductor 威世 | 下载 |
| UGB10BCTHE3/81 | Vishay Semiconductor 威世 | 下载 |
| UGB10BCTHE3/45 | Vishay Semiconductor 威世 | 下载 |
| UGB10FCT-E3/81 | Vishay Semiconductor 威世 | 下载 |
| UGB10FCTHE3/45 | Vishay Semiconductor 威世 | 下载 |
| UGB10FCT-E3/45 | Vishay Semiconductor 威世 | 下载 |
| UGB10GCT-E3/81 | Vishay Semiconductor 威世 | 下载 |
| UGB10GCTHE3/45 | Vishay Semiconductor 威世 | 下载 |
| UGB10GCTHE3/81 | Vishay Semiconductor 威世 | 下载 |