IGA03N120H2XKSA1

INFINEON  IGA03N120H2XKSA1  单晶体管, IGBT, 3 A, 2.8 V, 29 W, 1.2 kV, TO-220, 3 引脚

The IGA03N120H2 is a huge IGBT portfolio addressing soft switching/resonant and hard switching topologies. The 2nd generation high speed-technology for 1200V applications offers loss reduction in resonant circuits, temperature stable behaviour, parallel switching capability, tight parameter distribution and simple gate-control.

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Loss reduction in resonant circuit

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Temperature stable behaviour

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Parallel switching capability

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Tight parameter distribution

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EOFF optimized for IC = 1A

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±20V Gate-emitter voltage

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29W Power dissipation at 25°C