IRF6678TR1

IRF6678TR1 N沟道MOSFET 2.7A MT marking/标记 低栅极电荷/极低的RDS/高功率和电流绫能力

最大源漏极电压Vds Drain-Source Voltage| \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 2.7A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.16Ω/Ohm @1.9A,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 2.0-4.0V 耗散功率Pd Power Dissipation| 2.1W Description & Applications| DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. DirectFET Power MOSFET Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated 描述与应用| 说明 Vishay的第三代功率MOSFET提供 设计师与快速切换的最佳组合， 坚固耐用的设备设计，低导通电阻和成本效益。 SOT-223封装是专为表面安装 使用气相，红外或波峰焊技术。 其独特的包装设计，可以轻松自动 挑选和地方与其他SOT或SOIC封装，但 提高热过往的表现有额外的好处 由于散热放大“选项卡。的功耗 大于1.25 W是可能在一个典型的表面贴装应用。 DirectFET功率MOSFET 表面贴装 先进的工艺技术 超低导通电阻 动态dv/ dt额定值 快速切换