MRF8VP13350GNR3

RF Power Transistor,700 to 1300MHz, 350W, Typ Gain in dB is 20.7 @ 915MHz, 50V, LDMOS, SOT1825

Overview

These 350 W CW transistors, MRF8VP13350N and MRF8VP13350GN, are designed for industrial, scientific and medical ISM applications in the 700 to 1300 MHz frequency range. The transistors are capable of 350 W CW or pulse power in narrowband operation.

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## Features

* Internally input matched for ease of use

* Device can be used single-ended or in a push-pull configuration

* Qualified up to a maximum of 50 VDD operation

* Suitable for linear application with appropriate biasing

* Integrated ESD protection

* RoHS Compliant

**Typical Applications**

* 915 MHz industrial heating/welding systems

* 1300 MHz particle accelerators

* 900 MHz TETRA base stations

## Features RF Performance Tables

### 1300 MHz

VDD = 50 Vdc

.

*Frequency

MHz

.

* | **Signal Type** | **Gps

dB

.

* | **ηD

%

.

* | **Pout

W

.

*

\---|---|---|---|---

13001| Pulse

100 µsec, 20% Duty Cycle| 19.2| 58.0| 350 Peak

### 915 MHz

In 915 MHz reference circuit, VDD = 48 Vdc

.

*Frequency

MHz

.

* | **Signal Type** | **Gps

dB

.

* | **ηD

%

.

* | **Pout

W

.

*

\---|---|---|---|---

915| CW| 20.7| 67.5| 355

### Load Mismatch/Ruggedness

**Frequency

MHz

.

* | **Signal Type** | **VSWR** | **Pin

W

.

* | **Test

Voltage

.

* | **Result**

\---|---|---|---|---|---

13001 | Pulse

100 µsec,

20% Duty Cycle | > 20:1 at all

Phase Angles | 9.6 Peak

3 dB Overdrive | 50 | No Device

Degradation

1\\. Measured in 1300 MHz pulse narrowband test circuit.