IPP410N30NAKSA1

晶体管, MOSFET, N沟道, 44 A, 300 V, 0.036 ohm, 10 V, 3 V

Description:

The new OptiMOS™ 300V MOSFETs, incorporating fast diode technology, are especially optimized for body diode hard commutation. The devices not only demonstrate impressive on-state resistance R DSon and figure of merit FOM, but also provide high system reliability through the lowest reverse recovery charge Q rr available on the market. With the new 300V OptiMOS™ series, brings a new level of performance in hard switching applications such as telecom, uninterruptible power supplies UPS, industrial power supplies, DC-AC inverters and motor control.

Summary of Features:

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Fast diode technology

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Industry best R DSon with more than 58% lower FOM

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Hard commutation ruggedness

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Optimized hard switching behavior

Benefits:

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Highest efficiency and power density

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Board space and system cost reduction

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High system reliability

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Best switching performance

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Easy-to-design products