氮化镓对SiC耗尽型晶体管技术内部匹配 GaN on SiC Depletion-Mode Transistor Technology Internally Matched
RF Mosfet HEMT 50V 400mA 1.2GHz ~ 1.4GHz 19.22dB 500W
得捷:
TRANSISTOR GAN 500W 1.2-1.4GHZ
贸泽:
RF JFET Transistors 1.2-1.4GHz 50V GaN 500W Pk Gain 19.2dB
Verical:
Trans JFET 21.5A GaN HEMT 2-Pin
| 型号 | 品牌 | 下载 |
|---|---|---|
| MAGX-001214-500L00 | M/A-Com | 下载 |
| MAGX-001220-100L00 | M/A-Com | 下载 |
| MAGX-000035-05000P | M/A-Com | 下载 |
| MAGX-001090-600L00 | M/A-Com | 下载 |
| MAGX-000912-500L00 | M/A-Com | 下载 |
| MAGX-001214-650L00 | M/A-Com | 下载 |
| MAGX-011086 | M/A-Com | 下载 |
| MAGX-L20035-015000 | M/A-Com | 下载 |
| MAGX-000035-PB2PPR | M/A-Com | 下载 |
| MAGX-L21214-650L00 | M/A-Com | 下载 |
| MAGX-002731-180L00 | M/A-Com | 下载 |