F3L100R12W2H3B11BPSA1

晶体管, IGBT阵列&模块, N沟道, 50 A, 1.55 V, 375 W, 1.2 kV, Module

Summary of Features:

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Low inductive design

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Low Switching Losses

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Low V CEsat

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Al 2O 3 Substrate with Low Thermal Resistance

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Compact design

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PressFIT Contact Technology

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Rugged mounting due to integrated mounting clamps

Benefits:

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Compact module concept

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Optimized customer’s development cycle time and cost

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Configuration flexibility