IPB083N10N3GATMA1

INFINEON  IPB083N10N3GATMA1  晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V

OptiMOS™3 功率 MOSFET，100V 及以上

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB083N10N3GATMA1, 80 A, Vds=100 V, 3引脚 D2PAK TO-263封装

得捷:
MOSFET N-CH 100V 80A D2PAK

贸泽:
MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3

艾睿:
Make an effective common gate amplifier using this IPB083N10N3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 125000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes optimos 3 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

TME:
Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO263-3

Verical:
Trans MOSFET N-CH 100V 80A Automotive 3-Pin2+Tab D2PAK T/R

Newark:
# INFINEON  IPB083N10N3GATMA1  MOSFET Transistor, N Channel, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V