RN4603

BRT PNP NPN 100mA -50V

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| -50V/50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| -50V/50V 集电极连续输出电流IC Collector CurrentIC| -100mA/100mA Q1基极输入电阻R1 Input ResistanceR1| 22KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 22KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio| 1 Q2基极输入电阻R1 Input ResistanceR1| 22KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 22KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio| 1 直流电流增益hFE DC Current GainhFE| 70 截止频率fT Transtion FrequencyfT| 200MHz/250MHz 耗散功率Pc Power Dissipation| 300mW/0.3W Description & Applications| Features • TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type PCT Process • Includeing two devices in SM6 super mini type with 6 leads • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. 描述与应用| 特点 •的硅PNP外延型硅NPN外延型（PCT工艺）（PCT工艺） •包括，两台设备SM6（超迷你型6引线） •内置偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 应用 •开关，逆变电路，接口电路和驱动器电路应用