MRFE6VP5600HSR5

RF Power Transistor,1.8 to 600MHz, 600W, Typ Gain in dB is 24.6 @ 230MHz, 50V, LDMOS, SOT1829

Overview

These high ruggedness devices, MRFE6VP5600HR6 and MRFE6VP5600HSR6, are designed for use in high VSWR industrial including laser and plasma exciters, broadcast analog and digital, aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

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## Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Device can be used Single-Ended or in a Push-Pull Configuration

* Qualified Up to a Maximum of 50 VDD Operation

* Characterized from 30 V to 50 V for Extended Power Range

* Suitable for Linear Application with Appropriate Biasing

* Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Characterized with Series Equivalent Large-Signal Impedance Parameters

* RoHS Compliant

* In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

* These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.

**NOTE: PARTS ARE PUSH–PULL**

## Features

**NOTE: PARTS ARE PUSH–PULL**RF Performance Table

### 230 MHz Narrowband

Typical Performance: VDD = 50 Volts, IDQ = 100 mA

.

*Signal Type** | **Pout

W

.

* | **f

MHz

.

* | **Gps

dB

.

* | **ηD

%

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

Pulse 100 µsec,

20% Duty Cycle | 600 Peak| 230| 25.0| 74.6| –18

CW | 600 Avg.| 230| 24.6| 75.2| –17

* Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness

* 600 Watts Pulse Peak Power, 20% Duty Cycle, 100 µsec