IGBT 1700V 16A 190W TO268
The IGBT transistor from Ixys Corporation will work effectively even with higher currents. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 190000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
得捷:
IGBT 1700V 16A 190W TO268
艾睿:
Trans IGBT Chip N-CH 1.7KV 16A
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXGT16N170AH1 | IXYS Semiconductor | 下载 |
| IXGT60N60 | IXYS Semiconductor | 下载 |
| IXGT60N60B2 | IXYS Semiconductor | 下载 |
| IXGT60N60C2 | IXYS Semiconductor | 下载 |
| IXGT30N60B2 | IXYS Semiconductor | 下载 |
| IXGT30N60B2D1 | IXYS Semiconductor | 下载 |
| IXGT30N60C2 | IXYS Semiconductor | 下载 |
| IXGT30N60C2D1 | IXYS Semiconductor | 下载 |
| IXGT40N60B2 | IXYS Semiconductor | 下载 |
| IXGT40N60B2D1 | IXYS Semiconductor | 下载 |
| IXGT40N60C2 | IXYS Semiconductor | 下载 |