2N6387数据手册PDF_2N6387中文资料-锐单商城

2N6387概述

塑料中功率硅晶体管 Plastic Medium-Power Silicon Transistors

Plastic Medium-Power Silicon Transistors

These devices are designed for general-purpose amplifier and low-speed switching applications.

Features

• High DC Current Gain - hFE = 2500 Typ @ IC = 4.0 Adc

• Collector-Emitter Sustaining Voltage - @ 100 mAdc

VCEOsus = 60 Vdc Min -

= 80 Vdc Min - 2N6388

• Low Collector-Emitter Saturation Voltage -

VCEsat = 2.0 Vdc Max @ IC

= 5.0 Adc - 2N6387, 2N6388

• Monolithic Construction with Built-In Base-Emitter Shunt Resistors

• TO-220AB Compact Package

• Pb-Free Packages are Available

2N6387数据文档