TIP116G

塑料中功率互补硅晶体管 Plastic Medium-Power Complementary Silicon Transistors

- 双极 BJT - 单 PNP - 达林顿 - 通孔 TO-220

得捷:
TRANS PNP DARL 80V 2A TO220

立创商城:
中等功率 NPN 达林顿双极功率晶体管

艾睿:
Amplify your current using ON Semiconductor&s;s PNP TIP116G Darlington transistor in order to yield a higher current gain. This Darlington transistor array&s;s maximum emitter base voltage is 5 V. This product&s;s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.

安富利:
Trans Darlington PNP 80V 2A 3-Pin3+Tab TO-220AB Rail

Chip1Stop:
Trans Darlington PNP 80V 2A 3-Pin3+Tab TO-220AB Rail

Verical:
Trans Darlington PNP 80V 2A 2000mW 3-Pin3+Tab TO-220AB Tube

Newark:
# ON SEMICONDUCTOR  TIP116G  Bipolar BJT Single Transistor, PNP, 80 V, 50 W, 2 A, 1000 hFE

Win Source:
Plastic Medium-Power Complementary Silicon Transistors