AFV09P350-04NR3

RF Power Transistor,720 to 960MHz, 200W, Typ Gain in dB is 19.5 @ 920MHz, 48V, LDMOS, SOT1818

Overview

The and AFV09P350-04GNR3 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

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## Features

* Production Tested in a Symmetrical Doherty Configuration

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

## Features RF Performance Table

### 900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 860 mA, VGSB = 0.9 Vdc, Pout = 100 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

920 MHz| 19.5| 48.5| 7.2| –29.2

940 MHz| 19.5| 49.5| 7.1| –32.0

960 MHz| 19.2| 48.0| 7.0| –35.7