射频金属氧化物半导体场效应RF MOSFET晶体管 300W 50V RF MOS 26dB 123MHz N-Ch
By using a combination of metal-oxide-semiconductor technology, this RF amplifier from STMicroelectronics can be implemented in an electronic circuit as a switching device. The component will be shipped in tray format. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 250 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 200 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STAC4932F | ST Microelectronics 意法半导体 | 下载 |
| STAC2943 | ST Microelectronics 意法半导体 | 下载 |
| STAC4933 | ST Microelectronics 意法半导体 | 下载 |
| STAC150V2-350E | ST Microelectronics 意法半导体 | 下载 |
| STAC2932FW | ST Microelectronics 意法半导体 | 下载 |
| STAC3932F | ST Microelectronics 意法半导体 | 下载 |
| STAC4932B | ST Microelectronics 意法半导体 | 下载 |
| STAC2932BW | ST Microelectronics 意法半导体 | 下载 |
| STAC2942FW | ST Microelectronics 意法半导体 | 下载 |
| STAC2942BW | ST Microelectronics 意法半导体 | 下载 |
| STAC2933 | ST Microelectronics 意法半导体 | 下载 |