FDS6930B

FAIRCHILD SEMICONDUCTOR  FDS6930B.  场效应管, MOSFET, N沟道, 30V

The is a dual N-channel Logic Level MOSFET produced using Semiconductor"s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

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Fast switching speed

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Low gate charge

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High performance trench technology for extremely low RDS ON

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High power and current handling capability

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-55 to 150°C Junction and storage temperature range