单晶体管, IGBT, 12 A, 1.5 V, 88 W, 600 V, TO-252, 3 引脚
Summary of Features:
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Lowest V cesat drop for lower conduction losses
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Low switching losses
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Easy parallel switching capability due to positive temperature coefficient in V cesat
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Very soft, fast recovery anti-parallel Emitter Controlled Diode
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High ruggedness, temperature stable behavior
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Low EMI emissions
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Low gate charge
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Very tight parameter distribution
Benefits:
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Highest efficiency – low conduction and switching losses
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Comprehensive portfolio in 600V and 1200V for flexibility of design
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High device reliability