MHT1001HR5

RF Power Transistor,2450 to 2450MHz, 190W, Typ Gain in dB is 13.2 @ 2450MHz, 28V, LDMOS, SOT1787

Overview

The is an RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.

MoreLess

## Features

* Typical CW Performance at 2450 MHz: VDD = 28 Vdc, IDQ = 1900 mA, Pout = 190 W

Power Gain: 13.2 dB

Drain Efficiency: 46.2%

* Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 W CW Output Power

* Characterized with Series Equivalent Large-Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* RoHS Compliant

* In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.

## Features