RLD03N06CLE

0.3A ， 60V ， 6欧姆，额定静电放电，电流限制电路，电压钳位，逻辑电平N沟道功率MOSFET 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs

These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to

source voltage clamping offers precision control of the circuit voltage when switching inductive loads. The “Logic Level” gate allows this device to be fully biased on with only 5V from gate to source, thereby facilitating true on-off power control directly from logic level 5V integrated circuits.

Features

• 0.30A, 60V

•rDSON= 6.0Ω

• Built in Current Limit ILIMIT  0.140 to 0.210A at 150oC

• Built in Voltage Clamp

• Temperature Compensating PSPICE® Model

• 2kV ESD Protected

• Controlled Switching Limits EMI and RFI