ON SEMICONDUCTOR BD138G Bipolar BJT Single Transistor, PNP, 60 V, 12.5 W, 1.5 A, 25 hFE 新
The versatility of this PNP GP BJT from makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| BD138G | ON Semiconductor 安森美 | 下载 |
| BD1321G-TR | ROHM Semiconductor 罗姆半导体 | 下载 |
| BD13710S | Fairchild 飞兆/仙童 | 下载 |
| BD13516STU | Fairchild 飞兆/仙童 | 下载 |
| BD139-10 | ST Microelectronics 意法半导体 | 下载 |
| BD13916STU | Fairchild 飞兆/仙童 | 下载 |
| BD13910S | Fairchild 飞兆/仙童 | 下载 |
| BD13616STU | Fairchild 飞兆/仙童 | 下载 |
| BD1376S | Fairchild 飞兆/仙童 | 下载 |
| BD13516S | Fairchild 飞兆/仙童 | 下载 |
| BD13610STU | Fairchild 飞兆/仙童 | 下载 |