A2T18S160W31GSR3

RF Power Transistor,1805 to 1995MHz, 129W, Typ Gain in dB is 19.9 @ 1880MHz, 28V, LDMOS, SOT1805

Overview

The A2T18S160W31SR3 and 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz.

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## Features

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

* Optimized for Doherty Applications

* RoHS Compliant

## Features RF Performance Tables

### 1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1000 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1805 MHz| 19.6| 32.1| 7.2| –34.7| –12

1840 MHz| 20.1| 32.1| 7.2| –35.0| –17

1880 MHz| 19.9| 31.6| 7.2| –35.4| –12

### 1900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1000 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1930 MHz| 21.0| 32.2| 7.5| –34.4| –17

1960 MHz| 21.3| 32.2| 7.4| –34.4| –19

1995 MHz| 21.6| 32.9| 7.1| –33.9| –12