高速PT IGBT High Speed PT IGBT
This IGBT transistor from is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 625000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT80GA90LD40 | Microsemi 美高森美 | 下载 |
| APT8DQ60KG | Microsemi 美高森美 | 下载 |
| APT8M80K | Microsemi 美高森美 | 下载 |
| APT8M100B | Microsemi 美高森美 | 下载 |
| APT80GA60B | Microsemi 美高森美 | 下载 |
| APT80GA90B | Microsemi 美高森美 | 下载 |
| APT8052BFLLG | Microsemi 美高森美 | 下载 |
| APT8065BVRG | Microsemi 美高森美 | 下载 |
| APT80GA60LD40 | Microsemi 美高森美 | 下载 |
| APT85GR120L | Microsemi 美高森美 | 下载 |
| APT85GR120B2 | Microsemi 美高森美 | 下载 |